FDD6676 Fairchild Semiconductor, FDD6676 Datasheet
FDD6676
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FDD6676 Summary of contents
Page 1
... C unless otherwise noted A (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) (Note 1b) Reel Size 13’’ April 2001 DS(ON 8 4.5 V DS(ON Ratings Units 100 83 W 3.8 1.6 -55 to +175 C 1.8 C/W 40 C/W 96 C/W Tape width Quantity 12mm 2500 units FDD6676 Rev C(W) ...
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... GEN V = 15V 16 Min Typ Max Units 370 mV 100 nA –100 mV/ C 4.8 7.5 m 5.4 8.5 7.3 10 5103 pF 836 pF 361 139 FDD6676 Rev. C(W) ...
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... determined by the user's board design 40°C/W when mounted 1in pad copper and V = 10V. Package current limitation is 21A DS(on) J(max) GS Min Typ Max Units 3.2 0.7 1.2 (Note 96°C/W when mounted minimum pad. FDD6676 Rev. C( ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature = 3.0V 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 8 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6676 Rev. C( 1.2 ...
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... OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation R ( C/W JA P(pk ( Duty Cycle 100 1000 FDD6676 Rev. C(W) 30 100 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...