FQB10N60C Fairchild Semiconductor, FQB10N60C Datasheet

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FQB10N60C

Manufacturer Part Number
FQB10N60C
Description
600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
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Part Number:
FQB10N60C
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2003 Fairchild Semiconductor Corporation
FQB10N60C / FQI10N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C)*
Parameter
= 25°C)
Parameter
G
T
C
C
C
D
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
I
FQI Series
Features
• 9.5A, 600V, R
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
2
-PAK
FQB10N60C / FQI10N60C
DS(on)
Typ
--
--
--
-55 to +150
= 0.73
15.6
3.13
1.25
600
700
156
300
9.5
3.3
9.5
4.5
38
30
G
@V
! ! ! !
! ! ! !
Max
62.5
0.8
40
QFET
GS
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
= 10 V
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
● ●
● ●
● ●
● ●
S
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. A, October 2003
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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FQB10N60C Summary of contents

Page 1

... ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● FQB10N60C / FQI10N60C Units 600 V 9 700 mJ 9.5 A 15.6 mJ 4.5 V/ns 3.13 W ...

Page 2

... 9.5A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 600 V, V ...

Page 3

... Drain Current and Gate Voltage 3000 2500 C iss 2000 C oss 1500 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 20V GS ※ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2003 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.0 -100 100 150 200 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2003 Fairchild Semiconductor Corporation 2 D -PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Dimensions in Millimeters Rev. A, October 2003 ...

Page 8

... Package Dimensions 9.90 1.27 0.10 2.54 TYP 10.00 ©2003 Fairchild Semiconductor Corporation (Continued -PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Dimensions in Millimeters Rev. A, October 2003 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ...

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