FQB19N10L Fairchild Semiconductor, FQB19N10L Datasheet - Page 3

• Manufacturer Part Number: FQB19N10L
• Description: 100V LOGIC N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
1800
1500
1200
0.30
0.24
0.18
0.12
0.06
0.00
900
600
300
10
10
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : 3.0 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
V
GS
15
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
V
, Drain Current [A]
GS
0
10
V
30
GS
= 10V
0
= 5V
C
C
C
iss
oss
rss
45
C
C
C
iss
oss
rss
 Notes :
= C
= C
= C
10
1. 250 s Pulse Test
2. T
 Note : T
gs
gd
ds
1
C
+ C
+ C
= 25
60
10
gd
gd
1
 Notes :
(C
1. V
2. f = 1 MHz
ds
J
= 25
= shorted)
GS
= 0 V
75
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
-1
1
0
1
0
0.2
0
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25
Figure 2. Transfer Characteristics
175
0.4
175
Variation vs. Source Current
2
5
0.6
V
25
V
GS
Q
and Temperature
SD
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
-55
0.8
10
4
V
DS
= 80V
V
1.0
DS
= 50V
15
6
1.2
 Notes :
 Notes :
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
1.4
 Note : I
DS
GS
= 30V
20
= 0V
8
D
1.6
= 19A
Rev. A, August 2000
1.8
10
25