FQB70N08 Fairchild Semiconductor, FQB70N08 Datasheet

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FQB70N08

Manufacturer Part Number
FQB70N08
Description
80V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
©2000 Fairchild Semiconductor International
FQB70N08 / FQI70N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 70A, 80V, R
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 180 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
FQI Series
I
2
-PAK
DS(on)
FQB70N08 / FQI70N08
Typ
--
--
--
= 0.017
-55 to +175
1150
49.5
15.5
3.75
1.03
280
155
300
6.5
80
70
70
25
G
@V
!
!
Max
0.97
62.5
40
GS
QFET
QFET
QFET
QFET
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
August 2000
Rev. A, August 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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FQB70N08 Summary of contents

Page 1

... A = 25°C) C Parameter August 2000 QFET QFET QFET QFET = 0.017 @ DS(on " " ! " ! " " " " " FQB70N08 / FQI70N08 Units 49.5 A 280 1150 15.5 mJ 6.5 V/ns 3.75 W 155 W 1.03 W/°C -55 to +175 °C 300 °C Typ Max ...

Page 2

... ≤ 70A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6000 5000 4000 3000 2000 1000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International 175℃ 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 D PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Rev. A, August 2000 ...

Page 8

... Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 I PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. A, August 2000 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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