FQB70N10 Fairchild Semiconductor, FQB70N10 Datasheet - Page 4

• Manufacturer Part Number: FQB70N10
• Description: 100V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
3
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
 Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
0
1 0
C
J
10
= 175
= 25
- 5
DC
1
0 .0 2
0 .0 1
DS(on)
D = 0 .5
0 .0 5
0 .2
0 .1
50
o
C
o
C
10 ms
Figure 11. Transient Thermal Response Curve
1 ms
100
1 0
(Continued)
o
- 4
C]
s i n g le p u ls e
100 s
 Notes :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250  A
150
= 0 V
10 s
10
2
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
0
-100
25
 N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
 J C
J M
-50
DM
50
- T
( t) = 0 .9 4  / W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
D M
C
75
t
1 0
0
, Case Temperature [  ]
2
* Z
0
1
 J C
/t
2
( t)
100
50
1 0
1
125
100
o
C]
 Notes :
1. V
2. I
150
150
D
GS
= 35 A
= 10 V
Rev. B, August 2000
200
175