FQB9N08 Fairchild Semiconductor, FQB9N08 Datasheet

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FQB9N08

Manufacturer Part Number
FQB9N08
Description
80V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheets

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Part Number
Manufacturer
Quantity
Price
Part Number:
FQB9N08
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQB9N08L
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2000 Fairchild Semiconductor International
FQB9N08 / FQI9N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
resistance,
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
provide
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
superior
= 25°C) *
Parameter
= 25° C)
Parameter
G
D
T
S
C
C
C
switching
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 9.3A, 80V, R
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
FQI Series
I
2
-PAK
DS(on)
FQB9N08 / FQI9N08
Typ
--
--
--
-55 to +175
= 0.21
6.57
37.2
3.75
0.27
300
9.3
9.3
4.0
6.5
80
55
40
25
G
@V


Max
3.75
62.5
GS
40
QFET
QFET
QFET
QFET
= 10 V
 
 
December 2000




S
D






Rev. A2, December 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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