FQB9N50CF Fairchild Semiconductor, FQB9N50CF Datasheet
FQB9N50CF
Related parts for FQB9N50CF
FQB9N50CF Summary of contents
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... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB9N50CF Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...
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... DD G ≤ 9A, di/dt ≤ 200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQB9N50CF Rev. A Package Reel Size D2-PAK 330mm D2-PAK 330mm T = 25°C unless otherwise noted C Test Conditions = 250 µ ...
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... Figure 5. Capacitance Characteristics 2000 1600 C iss 1200 C oss 800 C rss 400 Drain-Source Voltage [V] DS FQB9N50CF Rev. A Figure 2. Transfer Characteristics ※ Notes : 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage V = 10V 20V GS ※ ...
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... J Figure 9. Maximum Safe Operating Area Operation in This Area Limited by R DS(on Drain-SourceVoltage[V] DS Figure 11. Transient Thermal Response Curve FQB9N50CF Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 -100 100 150 200 o C] Figure 10 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FQB9N50CF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FQB9N50CF Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions FQB9N50CF Rev. A D2-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQB9N50CF Rev. A OCX™ OCXPro™ ® OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ ...