FDPF26N40 Fairchild Semiconductor, FDPF26N40 Datasheet

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FDPF26N40

Manufacturer Part Number
FDPF26N40
Description
N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
©2008 Fairchild Semiconductor Corporation
FDP26N40 / FDPF26N40 Rev. A
www.DataSheet4U.com
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP26N40 / FDPF26N40
N-Channel MOSFET
400V, 26A, 0.16Ω
Features
• R
• Low gate charge ( Typ. 48nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
DSS
GSS
AS
AR
D
J
L
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.13Ω ( Typ.)@ V
G
( Typ. 30pF)
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
S
GS
TO-220
FDP Series
= 10V, I
D
= 13A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
G
D
o
C)
S
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
TO-220F
FDPF Series
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP26N40
FDP26N40
G
15.6
62.5
104
265
2.0
0.5
0.5
26
-55 to +150
1352
26.5
400
±30
300
4.5
26
FDPF26N40
FDPF26N40
S
D
February 2008
UniFET
15.6*
104*
62.5
26*
3.0
0.3
40
-
www.fairchildsemi.com
switching
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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