FQD20N06LE Fairchild Semiconductor, FQD20N06LE Datasheet
FQD20N06LE
Manufacturer Part Number
FQD20N06LE
Description
60V LOGIC N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
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Part Number:
FQD20N06LE
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
FQD20N06LE / FQU20N06LE
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25° C)
Parameter
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 17.2A, 60V, R
• Low gate charge ( typical 9.5 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150
• Low level gate drive requirements allowing direct
• Built-in ESD Protection Diode
FQU Series
operation form logic drivers
I-PAK
o
C maximum junction temperature rating
FQD20N06LE / FQU20N06LE
DS(on)
Typ
--
--
--
-55 to +150
= 0.06
17.2
10.9
68.8
17.2
0.30
170
300
3.8
7.0
2.5
60
38
20
G
@ V
Max
3.28
110
50
Q F E T
GS
= 10V
S
D
May 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Rev. B1. May 2001
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM
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