FQD8N25 Fairchild Semiconductor, FQD8N25 Datasheet - Page 3

• Manufacturer Part Number: FQD8N25
• Description: 250V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
10
800
600
400
200
10
10
2.0
1.6
1.2
0.8
0.4
0.0
-1
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : 5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
D
10
, Drain Current [A]
0
0
10
V
V
GS
GS
= 20V
= 10V
C
C
C
iss
oss
rss
15
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
10
※ Note : T
gs
gd
1
ds
1
C
+ C
+ C
= 25℃
20
gd
※ Notes :
gd
1. V
2. f = 1 MHz
(C
J
ds
GS
= 25℃
= shorted)
= 0 V
25
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
-1
1
0
1
0
0.2
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
150℃
4
3
V
V
0.6
SD
25℃
GS
Q
and Temperature
150℃
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
25℃
0.8
V
DS
V
DS
6
= 200V
6
V
DS
= 125V
= 50V
1.0
-55℃
※ Notes :
※ Notes :
1.2
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
9
DS
GS
= 50V
= 0V
1.4
D
= 8.0 A
1.6
Rev. A, May 2000
10
12