PN3638 Fairchild Semiconductor, PN3638 Datasheet
PN3638
Manufacturer Part Number
PN3638
Description
PNP Small Signal General Purpose Amplifiers & Switches
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN3638.pdf
(2 pages)
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1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
, T
*
JC
JA
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B E
PN3638
PN3638A
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
PN3638/A
Discrete POWER & Signal
Max
83.3
625
200
5.0
-55 to +150
Value
800
4.9
25
25
Technologies
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C
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PN3638 Summary of contents
Page 1
... Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & Signal Technologies Value Units 4.9 V 800 mA -55 to +150 C Max Units PN3638/A 625 mW 5.0 mW/ C 83.3 C/W 200 C/W ...
Page 2
... 300 mA 1.0 MHz CB PN3638 PN3638A 1.0 MHz BE PN3638 PN3638A mA 3 PN3638 f = 100 MHz PN3638A mA 1.0 kHz PN3638 PN3638A mA 1.0 kHz PN3638 PN3638A 300 mA ...