MT28F004B3VG-10TET

Manufacturer Part NumberMT28F004B3VG-10TET
Description4Mb SMART 3 BOOT BLOCK FLASH MEMORY
ManufacturerMicron
MT28F004B3VG-10TET datasheet
 


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FLASH MEMORY
FEATURES
• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V V
CC
3.3V ±0.3V V
application programming
PP
5V ±10% V
application/production programming
PP
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B3, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B3, 512K x 8)
• TSOP and SOP packaging options
OPTIONS
• Timing
80ns access
• Configurations
512K x 8
256K x 16/512K x 8
• Boot Block Starting Word Address
Top (3FFFFh)
Bottom (00000h)
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
• Packages
44-pin SOP (MT28F400B3)
48-pin TSOP Type I (MT28F400B3)
40-pin TSOP Type I (MT28F004B3)
NOTE:
1. This generation of devices does not support 12V V
compatibility production programming; however, 5V V
application production programming can be used with no
loss of performance.
Part Number Example:
MT28F400B3SG-8 T
4Mb Smart 3 Boot Block Flash Memory
F45_2.p65 – Rev. 2, Pub. 3/01
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
SMART 3 BOOT BLOCK FLASH MEMORY
MT28F004B3
MT28F400B3
3V Only, Dual Supply (Smart 3)
40-Pin TSOP Type I 48-Pin TSOP Type I
1
MARKING
GENERAL DESCRIPTION
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
-8
are nonvolatile, electrically block-erasable (flash), pro-
grammable memory devices containing 4,194,304 bits
MT28F004B3
organized as 262,144 words (16 bits) or 524,288 bytes (8
MT28F400B3
bits). Writing or erasing the device is done with either a
3.3V or 5V V
PP
T
with a 3.3V V
B
5V V
is optimal for application and production pro-
PP
gramming. These devices are fabricated with Micron’s
None
advanced 0.18µm CMOS floating-gate process.
ET
The MT28F004B3 and MT28F400B3 are organized
into seven separately erasable blocks. To ensure that
SG
critical firmware is protected from accidental erasure or
WG
overwrite, the devices feature a hardware-protected
VG
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
PP
ing WP# HIGH in addition to executing the normal write
PP
or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
Refer to Micron’s Web site (www.micron.com/flash)
for the latest data sheet.
1
4Mb
44-Pin SOP
voltage, while all operations are performed
. Due to process technology advances,
CC
©2001, Micron Technology, Inc.