MT29F8G08FABWP-ET Micron, MT29F8G08FABWP-ET Datasheet - Page 38

• Manufacturer Part Number: MT29F8G08FABWP-ET
• Description: 8Gb Mass Storage - OBSOLETE
• Manufacturer: Micron

Electrical Characteristics
Table 11:
Table 12:
V
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2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Device
Parameter/Condition
MT29FxGxxxAx
MT29FxGxxxAx
Storage temperature
Short circuit output current, I/Os
Operating temperature
V
Supply voltage
CC
CC
supply voltage
Power Cycling
Absolute Maximum Ratings by Device
Recommended Operating Conditions
Stresses greater than those listed under “Absolute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not guaranteed. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
Micron NAND Flash devices are designed to prevent data corruption during power tran-
sitions. V
functions are disabled. WP# provides additional hardware protection. WP# should be
kept at V
allowed for the Flash to initialize before executing any commands. (See Figure 17 on
page 21.)
Commercial
Extended
IL
CC
T
V
V
STG
during power cycling. When V
CC
IN
is internally monitored. When V
Supply voltage on any pin relative to Vss
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Symbol
38
Symbol
Vcc
Vss
t
t
A
A
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CC
reaches 2.0V, a minimum of 10µs should be
CC
Min
goes below 2.0V, PROGRAM and ERASE
–40
2.7
0
0
Electrical Characteristics
Typ
Min
–0.6
3.3
–
0
–
–
65
©2004 Micron Technology, Inc. All rights reserved.
+150
Max
+4.6
Max
+70
+85
3.6
5
0
Unit
Unit
mA
°C
V
o
o
V
V
C
C