DCR1020SF61 Dynex Semiconductor, DCR1020SF61 Datasheet - Page 4

• Manufacturer Part Number: DCR1020SF61
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR1020SF
DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
4/10
Symbol
Symbol
I
RRM
dV/dt
V
P
dI/dt
V
V
P
V
I
V
V
V
I
FGM
T(TO)
t
G(AV)
RGM
r
t
I
I
FGM
G(M)
GT
FGN
gd
/I
TM
T
q
L
H
GT
GD
DRM
Maximum on-state voltage
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
At 1800A peak, T
At V
To 67% V
From 67% V
Gate source 30V, 15
t
At T
At T
V
Rise time 0.5 s, T
I
V
V
T
T
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See Gate Characteristics curve/table
r
T
D
RM
DR
j
j
DRM
DRM
= 1000A, t
= 25
= 25
0.5 s. T
= 67% V
vj
vj
= 67% V
RRM
= 100V, dI
DRM
= 5V, T
= 5V, T
= 125
= 125
o
o
/V
C, V
C
T
DRM
case
DRM
j
= 125
o
o
DRM
D
C
C
, T
DRM
p
case
= 125
T
DRM
case
= 10V
j
= 1ms, T
= 125
RR
, Gate source 30V, 15
case
, dV
= 25
= 25
Conditions
/dt = 10A/ s,
o
to 1000A
Conditions
C.
case
o
j
= 125
C
= 25
o
DR
o
C.
o
= 25
C
C
/dt = 25V/ s
j
o
= 125˚C,
o
C
C
o
C
Repetitive 50Hz
Non-repetitive
www.dynexsemi.com
Typ.
Typ.
600
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
1000
Max.
1.92
0.25
0.25
100
600
200
150
300
150
1.5
3.6
1.2
3.0
30
30
10
5
5
-
Units
Units
V/ s
A/ s
A/ s
mA
m
mA
mA
mA
W
W
V
V
V
V
V
A
V
V
s
s