fqb24n08 Fairchild Semiconductor, fqb24n08 Datasheet

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fqb24n08

Manufacturer Part Number
fqb24n08
Description
Fqb24n08 / Fqi24n08 80v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FQB24N08
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
fqb24n08TM
Manufacturer:
FAIRCHILD
Quantity:
30 000
©2000 Fairchild Semiconductor International
FQB24N08 / FQI24N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 24A, 80V, R
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
FQI Series
I
2
-PAK
DS(on)
FQB24N08 / FQI24N08
Typ
--
--
--
= 0.06 @V
-55 to +175
3.75
230
300
7.5
6.5
0.5
80
24
17
96
24
75
25
G
!
!
GS
Max
62.5
2.0
40
QFET
QFET
QFET
QFET
= 10 V
! "
! "
!
!
!
!
S
D
"
"
"
"
"
"
August 2000
Rev. A, August 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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fqb24n08 Summary of contents

Page 1

... A = 25°C) C Parameter August 2000 QFET QFET QFET QFET = 0. DS(on " " ! " ! " G " " " " FQB24N08 / FQI24N08 Units 230 7.5 mJ 6.5 V/ns 3. 0.5 W/°C -55 to +175 °C 300 °C Typ ...

Page 2

... ≤ 24A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... C iss 1000 800 C 600 rss 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ Note : T = 25℃ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 D PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Rev. A, August 2000 ...

Page 8

... Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 I PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. A, August 2000 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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