fga25n12antd Fairchild Semiconductor, fga25n12antd Datasheet

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fga25n12antd

Manufacturer Part Number
fga25n12antd
Description
1200v Trench Igbt
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FGA25N12ANTD
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2005 Fairchild Semiconductor Corporation
FGA25N120ANTD Rev. A
FGA25N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V
• Low switching loss: E
• Extremely enhanced avalanche capability
Absolute Maximum Ratings
Thermal Characteristics
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM
F
FM
stg
J
L
CES
GES
D
Symbol
θJC
θJC
θJA
@ I
@ I
Symbol
C
C
= 25A and T
= 25A and T
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
C
C
= 25°C
= 25°C
G C E
off, typ
CE(sat), typ
= 0.96mJ
Description
= 2.0V
Parameter
TO-3P
(Note 1)
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 25°C
= 100°C
= 100°C
= 25°C
= 100°C
1
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching
application such as induction heating, microwave oven, etc.
FGA25N120ANTD
Typ.
--
--
--
-55 to +150
-55 to +150
G
G
1200
± 20
150
312
125
300
50
25
75
25
C
C
E
E
Max.
0.4
2.0
40
www.fairchildsemi.com
Units
°C
°C
°C
Units
W
W
V
V
A
A
A
A
A
°C/W
°C/W
°C/W
May 2005

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fga25n12antd Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Case for Diode θJC R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. A Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction = 2.0V and switching performances, high avalanche ruggedness and easy parallel operation ...

Page 2

Package Marking and Ordering Information Device Marking Device FGA25N120ANTD FGA25N120ANTD Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) V Collector to Emitter ...

Page 3

Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cur- rr rent Q Diode Reverse Recovery Charge rr FGA25N120ANTD Rev 25°C unless otherwise noted ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 20V ° C 15V 12V C 17V 160 140 120 100 Collector-Emitter Voltage, V Figure 3. Saturation Voltage vs. Case ...

Page 5

Typical Performance Characteristics Figure 7. Capacitance Characteristics 5000 4500 Ciss 4000 3500 3000 2500 2000 1500 1000 Coss 500 Crss 0 1 Collector-Emitter Voltage, V Figure 9. Turn-Off Characteristics vs. Gate Resistance 1000 100 Common Emitter V = 600V, V ...

Page 6

Typical Performance Characteristics Figure 13. Switching Loss vs. Collector Current Common Emitter V = ± 15V Ω ° 125 ° 0 ...

Page 7

Typical Performance Characteristics Figure 18. Forward Characteristics 125 ° 0.1 0.0 0.4 0.8 1.2 Forward Voltage , V Figure 20. Stored Charge 4000 3000 di/dt = 200A/ µ s ...

Page 8

Mechanical Dimensions 15.60 13.60 ±0.10 ø3.20 2.00 ±0.20 ±0.20 3.00 ±0.20 1.00 5.45TYP [5.45 ±0.30 ] FGA25N120ANTD Rev. A TO-3P ±0.20 ±0.20 ±0.20 9.60 5.45TYP [5.45 ±0. ±0.20 4.80 +0.15 1.50 –0.05 ±0.20 1.40 +0.15 0.60 –0.05 Dimensions ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ FRFET™ CoolFET™ GlobalOptoisolator™ ...

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