irlr110a Fairchild Semiconductor, irlr110a Datasheet - Page 2

• Manufacturer Part Number: irlr110a
• Description: Irlr/u110a Advanced Power Mosfet
• Manufacturer: Fairchild Semiconductor

IRLR/U110A
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=4mH, I
(3) I
(4) Pulse Test: Pulse Width = 250 s, Duty Cycle
(5) Essentially Independent of Operating Temperature
BV/ T
BV
V
R
V
C
t
t
I
I
C
C
Q
Q
I
Q
GS(th)
DS(on)
d(on)
d(off)
GSS
DSS
Q
g
I
SM
t
t
S
SD
rr
oss
t
DSS
iss
rss
fs
r
gs
gd
rr
SD
f
g
J
5.6A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=4.7A, V
250A/ s, V
Characteristic
Characteristic
DD
=25V, R
DD
G
=27 , Starting T
BV
DSS
(T
, Starting T
C
=25 C unless otherwise specified)
(1)
(4)
2%
J
=25 C
Min.
Min.
100
J
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
=25 C
Typ.
Typ.
0.23
180
0.1
5.5
0.9
3.5
3.2
50
20
10
17
85
--
--
--
--
--
--
--
--
--
--
8
8
Max. Units
Max. Units
-100
0.44
100
100
235
2.0
4.7
1.5
10
65
25
25
30
45
25
16
--
--
--
--
--
8
--
--
V/ C
nA
nC
ns
pF
ns
V
V
A
V
A
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
=250 A
=5.6A
F
=25 C,I
=25 C,I
/dt=100A/ s
=12
=0V,I
=5V,I
=20V
=-20V
=100V
=80V,T
=5V,I
=40V,I
=0V,V
=50V,I
=80V,V
See Fig 13
Test Condition
Test Condition
See Fig 5
D
D
D
S
F
DS
=250 A
=250 A
=2.35A
D
D
=5.6A
=4.7A,V
C
GS
=2.35A
=5.6A,
=125 C
=25V,f =1MHz
=5V,
See Fig 7
GS
=0V
(4) (5)
(4) (5)
(4)
(4)
(4)
2