mc68hc912dg128 Freescale Semiconductor, Inc, mc68hc912dg128 Datasheet - Page 120

• Manufacturer Part Number: mc68hc912dg128
• Description: M68hc12 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

Flash Memory
7.10 Erasing the Flash EEPROM
Technical Data
120
The following sequence demonstrates the recommended procedure for
erasing any of the Flash EEPROM. The V
proper level prior to executing step 4 the first time.
The flowchart in
sequence.
10. If all of the Flash EEPROM locations are erased, repeat the same
11. Read the entire array to ensure that the Flash EEPROM is erased.
12. Clear LAT.
13. Turn off V
1. Turn on V
2. Set the PPAGE register to point to the 32K Flash array to be
3. Write to any valid address in the 32K Flash array. This allows the
4. Apply erase voltage by setting ENPE.
5. Delay for a single erase pulse (t
6. Remove erase voltage by clearing ENPE.
7. Delay while high voltage is turning off (t
8. Read the entire array to ensure that the Flash EEPROM is erased.
9. If all of the Flash EEPROM locations are not erased, repeat steps
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erased. Set the LAT bit and ERAS bit to configure the Flash
EEPROM for erasing.
erase voltage to be turned on; the data written and the address
written are not important. The boot block will be erased only if the
control bit BOOTP is negated.
4 through 7 until either the remaining locations are erased, or until
the maximum erase pulses have been applied (n
number of pulses as required to erase the array. This provides
100% erase margin.
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FP
FP
Figure 7-2
Flash Memory
(apply program/erase voltage to the V
(reduce voltage on V
demonstrates the recommended erase
EPULSE
FP
FP
pin to V
pin voltage must be at the
MC68HC912DG128 — Rev 3.0
).
VERASE
DD
).
).
EP
FP
)
pin).
MOTOROLA