m36w832te STMicroelectronics, m36w832te Datasheet - Page 27

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m36w832te

Manufacturer Part Number
m36w832te
Description
32 Mbit 2mb X16, Boot Block Flash Memory And 8 Mbit 512kb X16 Sram, Multiple Memory Product
Manufacturer
STMicroelectronics
Datasheet

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DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 13,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
Table 13. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Note: V
Table 14. Device Capacitance
Note: Sampled only, not 100% tested.
V
V
V
Ambient Operating Temperature
Load Capacitance (C
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
DDF
DDQF
DDS
V DDQ
Symbol
0V
DDQ
Supply Voltage
C
Supply Voltage
C
Supply Voltage
OUT
IN
means V
DDQF
Input Capacitance
Output Capacitance
L
= V
Parameter
)
DDS
Parameter
V DDQ /2
AI90166
V
V
OUT
Test Condition
IN
in their circuit match the measurement conditions
when relying on the quoted parameters.
The operating and AC measurement parameters
given below (see Table 13, Operating and AC
Measurement Conditions) are those of the stand-
alone Flash and SRAM devices and some differ
from those of the stacked product.
Figure 9. AC Measurement Load Circuit
– 40
Min
2.7
= 0V, f=1 MHz
0.1µF
= 0V, f=1 MHz
0 to V
V
V DDQF
SRAM
DDQF
70
50
DDQF
0.1µF
/2
V DDF
Max
3.3
3.3
85
C L includes JIG capacitance
M36W832TE, M36W832BE
DEVICE
UNDER
TEST
– 40
Min
Flash Memory
2.7
2.7
0 to V
V
70 / 85
Max
DDQF
12
16
50
DDQF
V DDQF
/2
Max
3.6
3.6
85
5
C L
25k
Unit
pF
pF
Units
25k
AI90167
pF
°C
ns
V
V
V
V
V
27/64

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