m36w832te STMicroelectronics, m36w832te Datasheet - Page 9

• Manufacturer Part Number: m36w832te
• Description: 32 Mbit 2mb X16, Boot Block Flash Memory And 8 Mbit 512kb X16 Sram, Multiple Memory Product
• Manufacturer: STMicroelectronics

V
ground reference for all voltage measurements in
the Flash and SRAM chips, respectively.
Note: Each device in a system should have V
DF
FUNCTIONAL DESCRIPTION
The Flash and SRAM components have separate
power supplies and grounds and are distinguished
by three chip enable inputs: EF for the Flash mem-
ory and, E1S and E2S for the SRAM.
Recommended operating conditions do not allow
both the Flash and the SRAM to be in active mode
at the same time. The most common example is
Figure 4. Functional Block Diagram
SSF
, V
DDQF
and V
and V
SSS
Ground. V
PPF
A19-A20
decoupled with a 0.1µF ca-
A0-A18
WPF
UBS
RPF
E1S
E2S
LBS
WS
WF
GF
GS
EF
SSF
and V
SSS
are the
V DDF
V DDS
Flash Memory
32 Mbit (x16)
D-
8 Mbit (x16)
V DDQF
SRAM
V SSS
pacitor close to the pin. See Figure 9, AC
Measurement Load Circuit. The PCB trace
widths should be sufficient to carry the re-
quired V
simultaneous read operations on the Flash and
the SRAM which would result in a data bus con-
tention. Therefore it is recommended to put the
SRAM in the high impedance state when reading
the Flash and vice versa (see Table 2 Main Oper-
ation Modes for details).
V PPF
V SSF
PPF
program and erase currents.
M36W832TE, M36W832BE
DQ0-DQ15
AI90163
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