m36w832te STMicroelectronics, m36w832te Datasheet - Page 37

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m36w832te

Manufacturer Part Number
m36w832te
Description
32 Mbit 2mb X16, Boot Block Flash Memory And 8 Mbit 512kb X16 Sram, Multiple Memory Product
Manufacturer
STMicroelectronics
Datasheet

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Table 20. SRAM Read AC Characteristics
Note: 1. Sampled only. Not 100% tested.
Figure 17. SRAM Write AC Waveforms, E1
Note: 1. DQ0-DQ15 are high impedance if GS = V
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
E1HQZ
E2HQV
E2HQX
t
E2LQZ
E1LQV
E1LQX
AXQX
GHQZ
GLQV
GLQX
PD
PU
AVQV
AVAV
2. If E1S or E2S and WS are deasserted at the same time, DQ0-DQ15 remain high impedance.
(1)
(1)
A0-A18
E1S
E2S
WS
DQ0-DQ15
t
t
t
t
t
t
CHZ1
ACS1
CLZ1
t
Alt
t
ACC
OHZ
t
OLZ
OH
RC
OE
Read Cycle Time
Address Valid to Output Valid
Address Transition to Output Transition
Chip Enable 1 High to Output Hi-Z
Chip Enable 1 Low or Chip Enable 2 High to Output Valid
Chip Enable 1 Low to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
Chip Enable 1 High or Chip Enable 2 Low to Power Down
Chip Enable 1 Low or Chip Enable 2 High to Power Up
IH
tAVE2H
tAVE1L
.
Parameter
S
ADDRESS VALID
or E2S Controlled
tAVE1H
tAVE2L
tAVAV
tWLE1H
tWLE2L
tDVE1H
tDVE2L
tE1LE1H
tE2HE2L
INPUT VALID
M36W832TE, M36W832BE
tE1HDZ
tE2LDZ
Min
70
10
10
5
0
tE1HAX
tE2LAX
SRAM
Max
70
25
70
25
35
70
AI07966
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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