fdc6020c-f077 Fairchild Semiconductor, fdc6020c-f077 Datasheet - Page 7

• Manufacturer Part Number: fdc6020c-f077
• Description: Fdc6020c Complementary Powertrench? Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Characteristics : Q2
0.01
100
0.1
10
Figure 19. Maximum Safe Operating Area.
1
5
4
3
2
1
0
Figure 17. Gate Charge Characteristics.
0.1
0
SINGLE PULSE
R
R
θJA
DS(ON)
V
I
T
0.01
D
GS
0.1
A
= 102
= 5.9A
0.0001
1
= 25
1
= 4.5V
LIMIT
o
o
C/W
C
2
D = 0.5
V
DS
0.2
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
0.02
Q
0.01
1
DC
g
, GATE CHARGE (nC)
3
0.001
1s
100ms
SINGLE PULSE
4
10ms
Figure 21. Transient Thermal Response Curve.
1ms
V
100µs
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
DS
5
= 5V
10
10µs
0.01
10V
6
15V
7
0.1
8
100
t
1
, TIME (sec)
1000
900
800
700
600
500
400
300
200
100
10
8
6
4
2
0
0.01
0
Figure 18. Capacitance Characteristics.
1
0
C
Figure 20. Single Pulse Maximum
RSS
C
OSS
0.1
4
V
Power Dissipation.
C
DS
10
ISS
, DRAIN TO SOURCE VOLTAGE (V)
8
1
t
1
, TIME (sec)
P(pk)
Duty Cycle, D = t
T
R
R
J
θJA
- T
θJA
100
(t) = r(t) * R
A
= 102 °C/W
t
= P * R
1
12
t
10
2
θJA
θJA
1
(t)
/ t
SINGLE PULSE
R
2
θJA
16
T
100
1000
FDC6020C RevB (W)
A
= 102°C/W
= 25°C
V
f = 1MHz
GS
= 0 V
20
1000