fdc6020c-f077

Manufacturer Part Numberfdc6020c-f077
DescriptionFdc6020c Complementary Powertrench? Mosfet
ManufacturerFairchild Semiconductor
fdc6020c-f077 datasheet
 


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FDC6020C
Complementary PowerTrench
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state
resistance
and
yet
maintain
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
DC/DC converter
Load switch
Motor Driving
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
- Continuous
D
- Pulsed
P
Power Dissipation for Dual Operation
D
Power Dissipation for single Operation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
θJA
Thermal Resistance, Junction-to-Case
R
θJC
Package Marking and Ordering Information
Device Marking
Device
.020
FDC6020C
2003 Fairchild Semiconductor Corporation
MOSFET
Features
Q1 –4.2 A, –20V. R
Q2
5.9 A, 20V.
superior
Low gate charge
High performance trench technology for extremely
low R
.
DS(ON)
FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
Bottom Drain Contact
Bottom Drain Contact
4
4
5
5
6
6
Bottom Drain Contact
Bottom Drain Contact
T
= 25°C unless otherwise noted
A
Q1
–20
±12
–4.2
(Note 1a)
–20
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
Reel Size
Tape width
7’’
November 2003
= 55 mΩ @ V
= – 4.5 V
DS(ON)
GS
R
= 82 mΩ @ V
= – 2.5 V
DS(ON)
GS
R
= 27 mΩ @ V
= 4.5 V
DS(ON)
GS
R
= 39 mΩ @ V
= 2.5 V
DS(ON)
GS
Q2 (N)
Q2 (N)
3
3
2
2
1
1
Q1 (P)
Q1 (P)
Q2
Units
20
V
±12
V
5.9
A
20
1.6
W
1.8
1.2
–55 to +150
°C
68
°C/W
1
Quantity
8mm
3000 units
FDC6020C Rev B(W)

fdc6020c-f077 Summary of contents

  • Page 1

    ... November 2003 = 55 mΩ – 4.5 V DS(ON mΩ – 2.5 V DS(ON mΩ 4.5 V DS(ON mΩ 2.5 V DS(ON ( (P) Q1 (P) Q2 Units 20 V ± 1.6 W 1.8 1.2 –55 to +150 °C 68 °C/W 1 Quantity 8mm 3000 units FDC6020C Rev B(W) ...

  • Page 2

    ... 753 pF Q2 677 Q1 163 pF Q2 171 Ω 2 1 1 1.8 FDC6020C RevB (W) ...

  • Page 3

    ... CA 68°C/W when 2 mounted on a 1in pad copper (Single Operation). Type Min Typ Max Units Q1 –1 1.3 Q1 –0.8 –1 0.7 1 102°C/W when mounted on a minimum pad copper (Single Operation). FDC6020C RevB (W) ...

  • Page 4

    ... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -2. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6020C RevB ( 1.4 ...

  • Page 5

    ... Figure 8. Capacitance Characteristics 10µ 100 0.01 Figure 10. Single Pulse Maximum MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 102°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. FDC6020C RevB (W) 1000 ...

  • Page 6

    ... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 2. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6020C RevB ( 1.2 ...

  • Page 7

    ... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 102°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 102 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDC6020C RevB (W) 20 1000 ...

  • Page 8

    ... Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern For Standard Dual Configuration FDC6020C RevB (W) ...

  • Page 9

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...