2n3702-d75z

Manufacturer Part Number2n3702-d75z
Description2n3702 Pnp General Purpose Amplifier
ManufacturerFairchild Semiconductor
2n3702-d75z datasheet
 


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PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 300mA.
• Sourced from Process 68.
• See PN200 for Characteristics.
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
Symbol
V
Collector-Emitter Voltage
CEO
V
Collector-Base Voltage
CBO
V
Emitter-Base Voltage
EBO
I
Collector Current
C
T
, T
Operating and Storage Junction Temperature Range
J
ST
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
(BR)CEO
BV
Collector-Base Breakdown Voltage
(BR)CBO
BV
Emitter-Base Breakdown Voltage
(BR)EBO
I
Collector Cut-off Current
CBO
I
Emitter Cut-off Current
EBO
On Characteristics *
h
DC Current Gain
FE
V
(sat)
Collector-Emitter Saturation Voltage
CE
V
(sat)
Base-Emitter Saturation Voltage
BE
Small Signal Characteristics
C
Current Gain Bandwidth Product
ob
f
Output Capacitance
T
* Pulse Test: Pulse
300 s, Duty Cycle
2.0%
Thermal Characteristics
Symbol
P
Total Device Dissipation
D
Derate above 25 C
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Junction to Ambient
JA
©2002 Fairchild Semiconductor Corporation
2N3702
T
=25 C unless otherwise noted
a
Parameter
- Continuous
T
=25 C unless otherwise noted
a
Test Condition
I
= -10mA, I
= 0
C
B
I
= -100 A, I
= 0
C
E
I
= -100 A, I
= 0
E
C
V
= -20V, I
= 0
CB
E
V
= -3.0V, I
= 0
EB
C
V
= -5.0V, I
= -50mA
CE
C
I
= -50mA, I
= -5.0mA
C
B
V
= -5.0V, I
= -50mA
CE
C
V
= -10V, f = 1.0MHz
CB
I
= -50mA, V
= -5.0V
E
CE
T
=25 C unless otherwise noted
A
Parameter
TO-92
1
1. Emitter 2. Collector 3. Base
Value
Units
-25
V
-40
V
-5.0
V
-500
mA
-55 ~ +150
C
Min.
Typ.
Max.
Units
-25
V
-40
V
-5.0
V
-100
nA
-100
nA
60
300
-0.25
V
-0.6
-1.0
V
12
pF
100
MHz
Max.
Units
625
mW
5.0
mW/ C
83.3
C/W
200
C/W
Rev. B, July 2002

2n3702-d75z Summary of contents

  • Page 1

    ... Duty Cycle 2.0% Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation 2N3702 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = -10mA ...

  • Page 2

    ... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, July 2002 ...

  • Page 3

    CROSSVOLT â â â â Rev. I ...