2n3859a-d75z Fairchild Semiconductor, 2n3859a-d75z Datasheet
2n3859a-d75z
Manufacturer Part Number
2n3859a-d75z
Description
2n3859a Npn General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N3859A-D75Z.pdf
(3 pages)
©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and
• Sourced from Process 10.
• See PN100 for characteristics.
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse
Thermal Characteristics
V
V
V
I
T
Off Characteristics
BV
BV
BV
I
I
On Characteristics *
h
Small Signal Characteristics
C
f
rb’C
P
R
R
C
CBO
EBO
T
switches requiring collector currents to 300mA.
FE
J
Symbol
CEO
CBO
EBO
D
ob
Symbol
, T
JC
JA
(BR)CEO
(BR)CBO
(BR)EBO
Symbol
c
ST
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Time Constant
300 s, Duty Cycle
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
2.0%
Parameter
T
A
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
- Continuous
=25 C unless otherwise noted
2N3859A
I
I
V
V
I
V
V
V
I
V
f = 31.9MHz
C
C
E
C
CB
EB
CE
CE
CB
CE
= 1.0mA, I
= 100 A, I
= 100 A, I
= 2.0mA, V
= 1.0V, I
= 1.0V, I
= 18V, I
= 4.0V, I
= 10V, f = 1.0MHz
= 10V, I
Test Condition
E
C
C
C
B
E
C
C
CE
= 0
= 2.0mA
= 1.0mA
= 1.0mA
= 0
= 0
= 0
= 0
= 10V
Max.
83.3
625
200
5.0
1. Emitter 2. Collector 3. Base
1
Min.
100
6.0
60
60
75
90
-55 ~ +150
Value
500
6.0
60
60
Typ.
TO-92
Max.
200
250
150
mW/ C
0.5
0.5
4
Units
mW
C/W
C/W
Units
mA
V
V
V
Rev. B, July 2002
C
Units
MHz
pF
pS
V
V
V
A
A
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2n3859a-d75z Summary of contents
Page 1
... Duty Cycle 2.0% Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation 2N3859A T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 1.0mA ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, July 2002 ...
Page 3
CROSSVOLT â â â â Rev. I ...