2n7053-d75z Fairchild Semiconductor, 2n7053-d75z Datasheet - Page 2

• Manufacturer Part Number: 2n7053-d75z
• Description: 2n7052/2n7053/nzt7053 Npn Darlington Transistor
• Manufacturer: Fairchild Semiconductor

OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
I
h
V
V
F
C
Symbol
CBO
CES
EBO
FE
T
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
Electrical Characteristics
*
Typical Characteristics
Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%
on
sat
100
)
)
80
60
40
20
0.001
0
Typical Pulsed Current Gain
125 °C
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
Collector-Base Capacitance
vs Collector Current
I - COLLECTOR CURRENT (A)
C
0.01
Parameter
25 °C
0.1
- 40°C
TA = 25°C unless otherwise noted
I
I
I
V
V
V
I
I
I
I
I
V
1
C
C
E
C
C
C
C
C
CB
CE
EB
CB
= 1.0 mA, I
= 100 A, I
= 1.0 mA, I
= 100 mA, V
= 1.0 A, V
= 100 mA, I
= 100 mA, V
= 100 mA, V
= 80 V, I
= 80 V, I
= 7.0 V, I
= 10 V,f = 1.0 MHz 2N7052
Test Conditions
1.6
1.2
0.8
0.4
CE
E
E
B
C
C
E
2
0
B
= 0
= 0
10
CE
BE
CE
= 0
= 0
= 0
= 5.0 V
= 0
= 0.1 mA
= 5.0 V
= 5.0 V
= 5.0 V,
Collector-Emitter Saturation
Voltage vs Collector Current
= 1000
I - COLLECTOR CURRENT (mA)
2N7053
NPN Darlington Transistor
25 °C
C
P 06
10,000
1,000
Min
100
100
100
200
12
- 40°C
125 °C
20,000
Max
0.1
0.2
0.1
1.5
2.0
8.0
10
(continued)
Units
MHz
1000
pF
V
V
V
V
V
A
A
A