hyb514100bj-60 Infineon Technologies Corporation, hyb514100bj-60 Datasheet - Page 2

• Manufacturer Part Number: hyb514100bj-60
• Manufacturer: Infineon Technologies Corporation

The HYB 514100BJ is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.
The HYB 514100BJ utilizes CMOS silicon gate process as well as advances circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514100BJ to be packed in a standard plastic P-SOJ-26/20 package. This package
size provides high system bit densities and is compatible with commonly used automatic testing and
insertion equipment. System oriented features include single + 5 V ( 10 %) power supply, direct
interfacing with high performance logic device families such as Schottky TTL.
Type
HYB 514100BJ-50
HYB 514100BJ-60
Pin Configuration
Pin Names
A0 – A10
RAS
CAS
WE
DI
DO
V
V
N.C.
Semiconductor Group
CC
SS
Address Input
Row Address Strobe
Column Address Strobe
Read/Write Input
Data In
Data Out
Power Supply (+ 5 V)
Ground (0 V)
No Connection
Ordering Code
Q67100-Q971
Q67100-Q759
RAS
N.C.
A10
V
WE
A0
A2
A3
A1
DI
CC
1
2
3
4
5
9
10
11
12
13
Package
P-SOJ-26/20-2 300 mil
P-SOJ-26/20-2 300 mil
P-SOJ-26/20-2
2
26
25
24
23
22
18
17
16
15
14
SPP02808
V
DO
CAS
N.C.
A8
A7
A6
A5
A4
SS
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
HYB 514100BJ-50/-60
4M
1998-10-01
1 DRAM