hyb514100bj-60 Infineon Technologies Corporation, hyb514100bj-60 Datasheet - Page 6

• Manufacturer Part Number: hyb514100bj-60
• Manufacturer: Infineon Technologies Corporation

AC Characteristics (cont’d)
T
Parameter
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address
Column addr. to RAS lead time
Read command setup time
Read command hold time
Read command hold time referenced to RAS
CAS to output in low–Z
Output buffer turn-off delay
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
Semiconductor Group
A
= 0 to 70 C,
V
CC
= 5 V
5, 6
t
T
= 5 ns
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CRP
T
REF
RAC
CAC
AA
RAL
RCS
RCH
RRH
CLZ
OFF
WCH
WP
WCS
RWL
CWL
DS
DH
RWC
RWD
CWD
AWD
6
min. max. min. max.
5
3
–
–
–
–
25
0
0
0
0
0
8
8
0
13
13
0
10
115
50
13
25
-50
Limit Values
–
50
16
50
13
25
–
–
–
–
–
13
–
–
–
–
–
–
–
–
–
–
–
HYB 514100BJ-50/-60
5
3
–
–
–
–
30
0
0
0
0
0
10
10
0
15
15
0
10
130
60
15
30
-60
–
50
16
60
15
30
–
–
–
–
–
15
–
–
–
–
–
–
–
–
–
–
–
4M
Unit Note
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1998-10-01
1 DRAM
7
8, 9
8, 9
8, 10
11
11
8
12
13
14
14
13
13
13