hyb514100bj-60 Infineon Technologies Corporation, hyb514100bj-60 Datasheet - Page 5

• Manufacturer Part Number: hyb514100bj-60
• Manufacturer: Infineon Technologies Corporation

DC Characteristics (cont’d)
T
Parameter
Standby
Average
CAS-before-RAS refresh mode
Capacitance
T
Parameter
Input capacitance (A0 to A10, DI)
Input capacitance (RAS, CAS, WE)
Output capacitance (DO)
AC Characteristics
T
Parameter
Common Parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
Semiconductor Group
A
A
A
= 0 to 70 C,
= 0 to 70 C,
= 0 to 70 C,
V
V
CC
CC
supply current
supply current during
V
V
V
SS
CC
CC
= 0 V,
= 5.0 V
= 5 V
5, 6
V
CC
= 5 10 %,
t
-50 version
-60 version
T
f
= 5 ns
= 1 MHz
t
T
= 5 ns
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
I
I
RC
RP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
5
CC5
CC6
Symbol
C
C
C
I1
I2
IO
min.
–
–
–
min. max. min. max.
95
35
50
13
0
8
0
10
18
13
13
50
Limit Values
-50
min.
–
–
–
Limit Values
–
–
10k
10k
–
–
–
–
37
25
Limit Values
HYB 514100BJ-50/-60
max.
1
120
110
110
40
60
15
0
10
0
15
20
15
15
60
max.
5
7
7
-60
–
–
10k
10k
–
–
–
–
45
30
–
–
4M
Unit Test
mA
mA
mA
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Condition
1
2
1998-10-01
1 DRAM
Unit
pF
pF
pF