hy5du561622efp Hynix Semiconductor, hy5du561622efp Datasheet - Page 17

• Manufacturer Part Number: hy5du561622efp
• Description: 256mb Ddr Sdram
• Manufacturer: Hynix Semiconductor

Rev. 1.1 / June 2006
ABSOLUTE MAXIMUM RATINGS
Note: Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
Note:
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temper-
6. VIN=0 to VDD, All other pins are not tested under VIN =0V.
7. DQs are disabled, VOUT=0 to VDDQ
Operating Temperature (Ambient)
Storage Temperature
Voltage on V
Voltage on V
Voltage on inputs relative to V
Voltage on I/O pins relative to V
Output Short Circuit Current
Soldering Temperature ⋅ Time
Power Supply Voltage (DDR200, 266, 333)
Power Supply Voltage (DDR200, 266, 333)
Power Supply Voltage (DDR400)
Power Supply Voltage (DDR400)
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input Leakage Current
Output Leakage Current
Normal Strength
Output Driver
(V
Half Strength
Output Driver
(V
ature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum dif-
ference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
Peak to peak noise on VREF may not exceed ± 2% of the DC value.
OUT
OUT
=VTT ± 0.84 )
=VTT ± 0.68 )
DD
DDQ
Parameter
relative to V
relative to V
Parameter
3
2
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
6
7
SS
SS
SS
SS
1
1
4
5
(TA=0 to 70
VI(RATIO)
Symbol
Symbol
VIN(DC)
VID(DC)
T
V
V
V
SOLDER
V
V
T
V
V
IOH
IOH
V
IOL
IOL
INPUT
V
I
V
V
V
IOS
DDQ
DDQ
I
REF
DDQ
T
LO
STG
DD
DD
TT
LI
IH
DD
IL
IO
A
o
C, Voltage referenced to V
V
0.49*VDDQ
V
REF
REF
-16.8
-13.6
Min
0.36
0.71
16.8
13.6
-0.3
-0.3
2.3
2.3
2.4
2.4
-2
-5
+ 0.15
- 0.04
-1.0 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-55 ~ 150
-0.5 ~3.6
Rating
260 ⋅ 10
0 ~ 70
0.5*VDDQ
50
SS
Typ.
V
2.5
2.5
2.6
2.6
REF
= 0V)
-
-
-
-
-
-
-
-
-
-
-
HY5DU561622E(L)FP
HY5DU56822E(L)FP
V
V
0.51*VDDQ
V
VDDQ+0.3
VDDQ+0.6
REF
DDQ
REF
Max
1.4
2.7
2.7
2.7
2.7
+ 0.04
2
5
-
-
-
-
- 0.15
+ 0.3
o
C ⋅ Sec
Unit
mA
o
o
V
V
V
V
C
C
Unit
mA
mA
mA
mA
uA
uA
V
V
V
V
V
V
V
V
V
V
-
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