IRF620B FAIRCHILD [Fairchild Semiconductor], IRF620B Datasheet

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IRF620B

Manufacturer Part Number
IRF620B
Description
200V N-Channel MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet

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©2001 Fairchild Semiconductor Corporation
IRF620B/IRFS620B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF Series
TO-220
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 5.0A, 200V, R
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFS Series
TO-220F
IRF620B
IRF620B
0.38
2.65
62.5
DS(on)
5.0
3.2
0.5
18
47
-55 to +150
= 0.8
200
300
5.0
4.7
5.5
65
30
@V
G
IRFS620B
IRFS620B
5.0 *
3.2 *
0.25
18 *
3.95
62.5
GS
32
--
= 10 V
November 2001
D
S
Rev. A, November 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A

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IRF620B Summary of contents

Page 1

... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25°C) C Parameter November 2001 = 0 DS(on IRF620B IRFS620B Units 200 V 5.0 5 3.2 3 5.0 A 4.7 mJ 5.5 V/ 0.38 0.25 W/°C -55 to +150 °C 300 °C IRF620B IRFS620B Units 2.65 3.95 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, November 2001 ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS / T Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...

Page 3

Typical Characteristics V GS Top : 15 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5 Drain-Source Voltage [V] DS ...

Page 4

... T , Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs Temperature Case Temperature [ ℃ Figure 9-1. Maximum Safe Operating Area for IRF620B 2 10 Operation in This Area is Limited by R DS(on ※ Notes : 150 ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for IRF620B Figure 11. Transient Thermal Response Curve for IRFS620B © ...

Page 6

3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & ...

Page 7

Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( ...

Page 8

Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2001 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in ...

Page 9

Package Dimensions (Continued) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions ...

Page 10

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ DOME™ ...

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