IRF620B FAIRCHILD [Fairchild Semiconductor], IRF620B Datasheet - Page 3

• Manufacturer Part Number: IRF620B
• Description: 200V N-Channel MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
800
600
400
200
10
4.0
3.2
2.4
1.6
0.8
0.0
10
10
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
3
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
0
6
C
C
C
V
rss
iss
oss
GS
V
= 20V
GS
= 10V
9
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
12
※ Notes :
gd
1. V
2. f = 1 MHz
gd
(C
J
GS
= 25 ℃
ds
= shorted)
= 0 V
15
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
o
150
C
Variation with Source Current
0.4
2
o
C
150℃
4
0.6
4
V
V
and Temperature
Q
GS
SD
G
V
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
DS
V
25℃
-55
DS
= 160V
V
0.8
= 100V
DS
o
6
C
= 40V
6
1.0
8
1.2
※ Notes :
10
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 40V
= 0V
D
1.4
12
= 5.0 A
Rev. A, November 2001
1.6
10
14