FDPF10N60ZUT_12 FAIRCHILD [Fairchild Semiconductor], FDPF10N60ZUT_12 Datasheet

no-image

FDPF10N60ZUT_12

Manufacturer Part Number
FDPF10N60ZUT_12
Description
N-Channel MOSFET, FRFET 600V, 9A, 0.8?
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©2012 Fairchild Semiconductor Corporation
FDP10N60ZU/FDPF10N60ZUT Rev. C0
*Drain current limited by maximum junction temperature
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP10N60ZU / FDPF10N60ZUT
N-Channel MOSFET, FRFET
600V, 9A, 0.8Ω
Features
• R
• Low gate charge ( Typ. 31nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
G D S
rss
= 0.65Ω ( Typ.)@ V
( Typ. 15pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
= 4.5A
T
C
Parameter
= 25
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
G
o
= 25
C unless otherwise noted*
D
o
S
C)
C
C
= 25
= 100
o
1
C
TO-220F
FDPF Series
o
C)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 3)
(Note 1)
FDP10N60ZU FDPF10N60ZUT
FDP10N60ZU FDPF10N60ZUT Units
G
G
1.45
180
62.5
5.4
36
0.7
0.5
9
-55 to +150
600
±30
100
300
18
20
9
UniFET
D
D
S
S
62.5
5.4*
36*
0.3
3.0
42
9*
-
May 2012
www.fairchildsemi.com
switching
Units
o
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
tm
TM
C

Related parts for FDPF10N60ZUT_12

FDPF10N60ZUT_12 Summary of contents

Page 1

FDP10N60ZU / FDPF10N60ZUT N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features • 0.65Ω ( Typ.)@ V = 10V, I DS(on) GS • Low gate charge ( Typ. 31nC) • Low C ( Typ. 15pF) rss • Fast switching • ...

Page 2

Package Marking and Ordering Information Device Marking Device FDP10N60ZU FDP10N60ZU FDPF10N60ZUT FDPF10N60ZUT Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics 10 8 7.0 V 6 5.5 V 5.0 V *Notes: 1. 250 ,Drain-Source Voltage[V] DS Figure 3. ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperaure 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Drain Current vs. Case Temperature ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FDP10N60ZU/FDPF10N60ZUT Rev. C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP10N60ZU/FDPF10N60ZUT Rev. C0 Peak Diode Recovery ...

Page 7

Mechanical Dimensions 9.90 ø3.60 ±0.10 1.27 2.54TYP [2.54 ±0.20 ] 10.00 FDP10N60ZU/FDPF10N60ZUT Rev. C0 TO-220 ±0.20 (8.70) ±0.10 ±0.10 1.52 ±0.10 0.80 2.54TYP [2.54 ±0.20 ] ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 ±0.20 2.40 –0.05 www.fairchildsemi.com ...

Page 8

Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP10N60ZU/FDPF10N60ZUT Rev. C0 TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ ® AccuPower™ FRFET AX-CAP™* Global Power ...

Related keywords