FDPF10N60ZUT_12 FAIRCHILD [Fairchild Semiconductor], FDPF10N60ZUT_12 Datasheet - Page 3

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FDPF10N60ZUT_12

Manufacturer Part Number
FDPF10N60ZUT_12
Description
N-Channel MOSFET, FRFET 600V, 9A, 0.8?
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
FDP10N60ZU/FDPF10N60ZUT Rev. C0
Typical Performance Characteristics
3000
2500
2000
1500
1000
500
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
20
10
Figure 1. On-Region Characteristics
1
0
0.1
1
0
V
GS
=
V
5
10.0 V
V
Drain Current and Gate Voltage
DS
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
DS
C
C
C
, Drain-Source Voltage [V]
rss
iss
oss
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
10
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
1
V
GS
= 10V
15
*Notes:
1. 250
2. T
* Note : T
V
C
GS
20
= 25
μ
s Pulse Test
= 20V
* Note:
o
10
C
1. V
2. f = 1MHz
J
10
= 25
25
GS
= 0V
o
C
20
30
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
10
10
30
20
10
8
6
4
2
0
1
1
0.0
0
3
Variation vs. Source Current
and Temperature
V
SD
Q
, Body Diode Forward Voltage [V]
4
10
V
0.5
g
V
V
V
, Total Gate Charge [nC]
GS
DS
DS
DS
,Gate-Source Voltage[V]
= 150V
= 380V
= 400V
150
o
5
C
1.0
20
* Notes :
1. V
2. 250
Notes:
1. V
2. 250
6
25
* Note : I
DS
o
GS
C
150
25
μ
μ
= 20V
s Pulse Test
= 0V
s Pulse Test
o
1.5
30
o
C
C
www.fairchildsemi.com
D
7
= 10A
2.0
40
8

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