M29DW324DB70N1E NUMONYX [Numonyx B.V], M29DW324DB70N1E Datasheet - Page 24

• Manufacturer Part Number: M29DW324DB70N1E
• Description: 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
• Manufacturer: NUMONYX [Numonyx B.V]

M29DW324DT, M29DW324DB
Table 14. DC Characteristics
Note: 1. Sampled only, not 100% tested.
24/50
I
Symbol
CC3
I
CC1
V
I
V
V
V
V
V
I
I
CC2
V
I
LKO
LO
PP
OH
PP
OL
LI
2. In Dual operations the Supply Current will be the sum of
IH
ID
IL
(1,2)
(2)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby)
Supply Current (Program/
Erase)
Input Low Voltage
Input High Voltage
Voltage for
Acceleration
Current for
Acceleration
Output Low Voltage
Output High Voltage
Identification Voltage
Program/Erase Lockout Supply
Voltage
Parameter
V
V
PP
PP
/WP
/WP
Program
Program
Controller active
Program/Erase
V
V
E = V
RP = V
Test Condition
0V V
E = V
CC
CC
I
0V V
OH
I
I
CC1
OL
f = 6MHz
= 2.7V ±10%
= 2.7V ±10%
= –100
IL
= 1.8mA
(read) and
CC
OUT
, G = V
CC
IN
±0.2V,
V
±0.2V
V
PP
V
µ
CC
V
V
CC
A
PP
IH
/WP = V
IL
I
,
CC3
/WP =
or V
(program/erase).
IH
PP
V
0.7V
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
V
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+0.3
Unit
mA
mA
mA
mA
µ
µ
µ
V
V
V
V
V
V
V
A
A
A