M29DW324DB70N1E NUMONYX [Numonyx B.V], M29DW324DB70N1E Datasheet - Page 40

• Manufacturer Part Number: M29DW324DB70N1E
• Description: 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
• Manufacturer: NUMONYX [Numonyx B.V]

M29DW324DT, M29DW324DB
Table 27. CFI Query System Interface Information
Table 28. Device Geometry Definition
Note: For the M29DW324DB, Region 1 corresponds to addresses 000000h to 007FFFh and Region 2 to addresses 008000h to 1FFFFFh.
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1Ch
1Dh
1Bh
1Eh
1Fh
x16
20h
21h
22h
23h
24h
25h
26h
2Ch
2Dh
x16
27h
28h
29h
2Ah
2Bh
2Eh
2Fh
30h
31h
32h
33h
34h
For the M29DW324DT, Region 1 corresponds to addresses 1F8000h to 1FFFFFh and Region 2 to addresses 000000h to 1F7FFFh.
Address
Address
3Ch
4Ch
3Ah
3Eh
4Ah
36h
38h
40h
42h
44h
46h
48h
x8
5Ch
4Eh
5Ah
5Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
x8
00C5h
00B5h
000Ah
0027h
0036h
0004h
0000h
0000h
0004h
0000h
0003h
0000h
Data
003Eh
0016h
0002h
0000h
0000h
0000h
0002h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
Data
V
V
V
V
Typical timeout per single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full Chip Erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for Chip Erase = 2
CC
CC
PP
PP
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of Erase Blocks of identical size = 003Eh+1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
n
in number of bytes
Description
Description
n
n
times typical
ms
n
n
n
times typical
ms
times typical
n
n
times typical
µs
n
µs
n
256 µs
Value
11.5V
12.5V
16µs
2.7V
3.6V
4 MByte
64Kbyte
NA
NA
NA
8 s
NA
x8, x16
8Kbyte
Async.
1s
Value
NA
63
2
8