M29W004B-100N1TR STMICROELECTRONICS [STMicroelectronics], M29W004B-100N1TR Datasheet

no-image

M29W004B-100N1TR

Manufacturer Part Number
M29W004B-100N1TR
Description
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
DESCRIPTION
The M29W004 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V V
Program and Erase operations the necessary high
voltages are generated internally. The device can
also be programmed in standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
June 1999
This is information on a product still in production but not recommended for new designs.
M29W004T and M29W004B are replaced
respectively by the M29W004BT and
M29W004BB
2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
FAST PROGRAMMING TIME: 10 s typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M29W004T: EAh
– Device Code, M29W004B: EBh
Erase Suspend
CC
Low Voltage Single Supply Flash Memory
supply. For
Figure 1. Logic Diagram
4 Mbit (512Kb x8, Boot Block)
A0-A18
RP
W
G
E
19
V CC
TSOP40 (N)
M29W004B
M29W004T
10 x 20 mm
V SS
M29W004B
M29W004T
NOT FOR NEW DESIGN
8
DQ0-DQ7
RB
AI02063
1/30

Related parts for M29W004B-100N1TR

M29W004B-100N1TR Summary of contents

Page 1

... Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code, M29W004T: EAh – Device Code, M29W004B: EBh DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2 ...

Page 2

... M29W004T, M29W004B Figure 2. TSOP Pin Connections A16 1 A15 A14 A13 A12 A11 M29W004T M29W004B A18 Warning Not Connected. DESCRIPTION (Cont’d) the application. Each block can be programmed and erased over 100,000 cycles. Instructions for Read/Reset, Auto Select for read- ...

Page 3

... Memory Blocks The devices feature asymmetrically blocked archi- tecture providing system memory integration. Both M29W004T and M29W004B devices have an array of 11 blocks, one Boot Block of 16K Bytes, two Parameter Blocks of 8K Bytes, one Main Block of 32K Bytes and seven Main Blocks of 64K Bytes. ...

Page 4

... M29W004T, M29W004B Figure 3. Memory Map and Block Address Table (x8) M29W004T 7FFFFh 16K BOOT BLOCK 7C000h 7BFFFh 8K PARAMETER BLOCK 7A000h 79FFFh 8K PARAMETER BLOCK 78000h 77FFFh 32K MAIN BLOCK 70000h 6FFFFh 64K MAIN BLOCK 60000h 5FFFFh 64K MAIN BLOCK 50000h 4FFFFh 64K MAIN BLOCK ...

Page 5

... Table 3A. M29W004T Block Address Table Address Range 00000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-77FFFh 78000h-79FFFh 7A000h-7BFFFh 7C000h-7FFFFh Table 3B. M29W004B Block Address Table Address Range 00000h-03FFFh 04000h-05FFFh 06000h-07FFFh 08000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh A18 A17 A16 ...

Page 6

... The manufacturer’s code for STMi- croelectronics is 20h, the device code is EAh for the M29W004T (Top Boot) and EBh for the M29W004B (Bottom Boot). These codes allow pro- gramming equipment or applications to automat- ically match their interface to the characteristics of the M29W004. The Electronic Signature is output ...

Page 7

... M29W004T, M29W004B A6 A9 A12 A15 DQ0-DQ7 A6 A9 A12 A15 Data Output A6 A9 A12 A15 Data Input ...

Page 8

... M29W004T, M29W004B INSTRUCTIONS AND COMMANDS The Command Interface latches commands writ- ten to the memory. Instructions are made up from one or more commands to perform Read Memory Array, Read Electronic Signature, Read Block Pro- tection, Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made of address and data sequences ...

Page 9

... Manufacturer code (20h). Address bits and A13-A18 within the Block will output the Block Protection status M29W004T, M29W004B 4th Cyc. 5th Cyc. 6th Cyc. 7th Cyc. Read Memory Array until a new write cycle is initiated. ...

Page 10

... M29W004T, M29W004B Table 9. Status Register Bits DQ Name Logic Level ’1’ ’0’ Data 7 Polling DQ DQ ’-1-0-1-0-1-0-1-’ Toggle Bit ’-1-1-1-1-1-1-1-’ ’1’ 5 Error Bit ’0’ 4 Reserved ’1’ Erase 3 Time Bit ’0’ ’-1-0-1-0-1-0-1-’ 2 Toggle Bit ...

Page 11

... Status bits DQ6 and DQ7 determine if program- ming is on-going and DQ5 allows verification of any possible error. Programming at an address not in blocks being erased is also possible during erase suspend. In this case, DQ2 will toggle at the ad- dress being programmed. M29W004T, M29W004B with while A13-A18 IL IH 11/30 ...

Page 12

... M29W004T, M29W004B Table 11. AC Measurement Conditions Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 4. AC Testing Input Output Waveform 3V 0V (1) Table 12. Capacitance (T Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: 1. Sampled only, not 100% tested. ...

Page 13

... after the falling edge of E without increasing t GLQV M29W004T, M29W004B M29W004T / M29W004B -90 -100 V = 3. 2. 30pF C = 30pF L L Min Max Min Max 90 100 90 100 ...

Page 14

... after the falling edge of E without increasing t GLQV M29W004T / M29W004B -120 -150 V = 2. 2. Min Max Min Max 120 150 120 150 0 0 120 150 ...

Page 15

... Figure 6. Read Mode AC Waveforms M29W004T, M29W004B 15/30 ...

Page 16

... Coded cycles are wrong, the instruction aborts, and the device is reset to Read Array not necessary to program the block with 00h as the P/E.C. will do this auto- matically before to erasing to FFh. Read operations M29W004T / M29W004B -90 -100 V = 2.7V to 3.6V ...

Page 17

... Status Register bit DQ5 returns ’1’ if there has been an erase failure. In such a situation, the Toggle bit DQ2 can be used to determine which block is not correctly erased. In the case of erase failure, a Read/Reset RD instruction is necessary in order to reset the P/E.C. M29W004T, M29W004B M29W004T / M29W004B -120 -150 V = 2.7V to 3.6V CC Max ...

Page 18

... M29W004T, M29W004B Figure 7. Write AC Waveforms, W Controlled A0-A18 DQ0-DQ7 V CC tVCHEL RB Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. stop when erase is completed. After completion the Status Register bit DQ5 returns ’1’ if there has been an Erase Failure ...

Page 19

... Vcc is below V Supply Rails Normal precautions must be taken for supply volt- age decoupling; each device in a system should have the V close to the V widths should be sufficient to carry the V gram and erase currents required. IH M29W004T, M29W004B M29W004T / M29W004B -90 -100 V = 2. 30pF C = 30pF L ...

Page 20

... Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 20/30 Parameter V = 2.7V to 3.6V CC Min 120 500 ID 500 4 M29W004T / M29W004B -120 -150 V = 2.7V to 3.6V CC Max Min Max 150 500 500 90 90 ...

Page 21

... Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. Figure 9. Read and Write AC Characteristics, RP Related tAVAV VALID tAVEL tWLEL tGHEL tELEH tDVEH tPHEL tPHWL tPLPX tPLYH M29W004T, M29W004B tELAX tEHWH tEHGL tEHEL tEHDX VALID tEHRL tPHPHH AI02096 AI02091 21/30 ...

Page 22

... V = 3. 2. 30pF C = 30pF L L Min Max Min 10 2400 10 1.0 30 1.0 10 2400 10 1 2400 10 1.0 30 1.0 10 2400 10 1.0 30 1.0 (1) M29W004T / M29W004B -120 -150 V = 2. 2. Min Max Min 10 2400 10 1.0 30 1.0 10 2400 10 1 2400 10 1.0 30 1.0 10 2400 10 1.0 30 1.0 Unit Max 2400 ms 30 ...

Page 23

... Figure 10. Data Polling DQ7 AC Waveforms M29W004T, M29W004B 23/30 ...

Page 24

... Boot Block Erase Parameter Block Erase Main Block (32Kb) Erase Main Block (64Kb) Erase Chip Program (Byte) Byte Program Program/Erase Cycles (per Block) 24/30 Figure 12. Data Toggle Flowchart PASS AI01369 M29W004T / M29W004B Min 100,000 START READ DQ2, DQ5 & DQ6 NO DQ2, DQ6 = TOGGLE YES ...

Page 25

... Figure 13. Data Toggle DQ6, DQ2 AC Waveforms M29W004T, M29W004B 25/30 ...

Page 26

... M29W004T, M29W004B Figure 14. Block Protection Flowchart Set-up Protect Verify 26/30 START BLOCK ADDRESS on A13-A18 Wait 4µ Wait 100µ VERIFY BLOCK PROTECTION A0 A13-A18 IDENTIFY BLOCK Wait 4µs ...

Page 27

... Wait 10ms A1 A13-A18 IDENTIFY BLOCK Wait 4µ Wait 60ns VERIFY BLOCK PROTECT STATUS NO DATA YES = 00h YES M29W004T, M29W004B Set-up Unprotect Verify NEXT BLOCK LAST NO BLK. YES PASS AI02100C 27/30 ...

Page 28

... M29W004T and M29W004B are replaced respectively by the new version M29W004BT and M29W004BB Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you ...

Page 29

... Drawing is not to scale. mm Min Max 1.20 0.05 0.15 0.95 1.05 0.17 0.27 0.10 0.21 19.80 20.20 18.30 18.50 9.90 10.10 – – 0. DIE C M29W004T, M29W004B inches Typ Min 0.047 0.002 0.006 0.037 0.041 0.007 0.011 0.004 0.008 0.780 0.795 0.720 0.728 0.390 0.398 0.020 – 0.020 0.028 0 40 0.004 Max – ...

Page 30

... M29W004T, M29W004B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

Related keywords