NAND08GW3C2A NUMONYX [Numonyx B.V], NAND08GW3C2A Datasheet
NAND08GW3C2A
Manufacturer Part Number
NAND08GW3C2A
Description
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.NAND08GW3C2A.pdf
(58 pages)
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Features
January 2008
High density multilevel cell (MLC) Flash
memory
– Up to 16 Gbit memory array
– Up to 512 Mbit spare area
– Cost-effective solutions for mass storage
NAND interface
– x 8 bus width
– Multiplexed address/data
Supply voltage: V
Page size: (2048 + 64 spare) bytes
Block size: (256K + 8K spare) bytes
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
Page read/program
– Random access: 60 µs (max)
– Sequential access: 25 ns (min)
– Page program operation time: 800 µs (typ)
Multipage program time (2 pages): 800 µs (typ)
Fast block erase
– Block erase time: 2.5 ms (typ)
Multiblock erase time (2 blocks): 2.5 ms (typ)
Status register
Electronic signature
Serial number option
Chip enable ‘don’t care’
applications
performed on both planes at the same time
3 V supply, multilevel, multiplane, NAND Flash memory
DD
= 2.7 to 3.6 V
Rev 2
Data protection
– Hardware program/erase locked during
Development tools
– Error correction code models
– Bad block management and wear leveling
– HW simulation models
Data integrity
– 10,000 program/erase cycles (with ECC)
– 10 years data retention
ECOPACK
power transitions
algorithm
8/16 Gbit, 2112 byte page,
NAND08GW3C2A
NAND16GW3C4A
®
TSOP48 12 x 20 mm (N)
LGA52 12 x 17 mm (N)
packages available
www.numonyx.com
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