NAND08GW3C2A NUMONYX [Numonyx B.V], NAND08GW3C2A Datasheet - Page 40

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NAND08GW3C2A

Manufacturer Part Number
NAND08GW3C2A
Description
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet

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DC and AC parameters
12
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DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC characteristics
tables are derived from tests performed under the measurement conditions summarized in
Table 17: Operating and ac measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 17.
Table 18.
1. T
Supply voltage (V
Ambient temperature (T
Load capacitance (C
Input pulses voltages
Input and output timing ref. voltages
Output circuit resistor R
Input rise and fall times
Symbol
C
C
A
I/O
IN
= 25 °C, f = 1 MHz. C
Operating and ac measurement conditions
Capacitance
Input capacitance
DD
capacitance
Input/output
Parameter
)
L
) (1 TTL GATE and C
A
ref
)
IN
and C
(1)
Parameter
I/O
are not 100% tested.
Test condition
L
)
V
V
IN
conditions. Designers should check that the
IL
= 0 V
= 0 V
NAND08GW3C2A, NAND16GW3C2A
Typ
NAND08GW3C2A,
NAND16GW3C2A
Min
–40
2.7
0.4
0
Max
8.35
10
10
1.5
50
5
Max
3.6
2.4
70
85
Unit
pF
pF
Units
pF
kΩ
°C
°C
ns
V
V
V

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