HYI39S128160FT-7 QIMONDA [Qimonda AG], HYI39S128160FT-7 Datasheet - Page 13

• Manufacturer Part Number: HYI39S128160FT-7
• Description: 128-MBit Synchronous DRAM
• Manufacturer: QIMONDA [Qimonda AG]

1)
2) All voltages are referenced to
3)
1) Capacitance values are shown for TSOP-54 packages. Capacitance values for TFBGA packages are lower by 0.5 pF
2)
Rev. 1.32, 2007-10
10122006-I6LJ-WV3H
Parameter
Supply Voltage
I/O Supply Voltage
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input(0 V <
Output leakage current(DQs are disabled, 0 V <
Parameter
Input Capacitances: CK
Input Capacitance
(A0-A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
Input/Output Capacitance (DQ)
T
V
Pulse width measured at 50% points with amplitude measured peak to DC reference.
T
A
A
IH
= 0 to 70 ºC
= 0 to 70 ºC;
may overshoot to
V
DD
I
,
OUT
I
V
OUT
V
DDQ
DDQ
= 4.0 mA)
= – 4.0 mA)
= 3.3 V ± 0.3 V, f = 1 MHz
+ 2.0 V for pulse width of < 4ns with 3.3 V.
V
SS
V
IN
<
V
DD
, all other inputs = 0 V)
V
OUT
<
V
DDQ
13
)
V
IL
may undershoot to -2.0 V for pulse width < 4.0 ns with 3.3 V.
Symbol
C
C
C
I1
I2
I0
Symbol
V
V
V
V
V
V
I
I
IL
OL
DD
DDQ
IH
IL
OH
OL
HY[B/I]39S128[40/80/16][0/7]F[E/T](L)
Values
Min.
2.5
2.5
4.0
Min. Max.
3.0
3.0
2.0
– 0.3 +0.8
2.4
–
– 5
– 5
Input and Output Capacitances
Values
3.6
3.6
V
–
0.4
+5
+5
1)
DDQ
128-MBit Synchronous DRAM
Max.
3.5
3.8
6.0
+0.3 V
Unit Note/
V
V
V
V
V
μA
μA
DC Characteristics
Unit
pF
pF
pF
Test Condition
1)2)
1)2)
1)2)3)
1)2)3)
1)2)
1)2)
1)
1)
TABLE 10
TABLE 9
Data Sheet
Note
2)
2)
2)