M59DR032A100N1T STMICROELECTRONICS [STMicroelectronics], M59DR032A100N1T Datasheet

M59DR032A100N1T

Manufacturer Part Number

M59DR032A100N1T

Description

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

Manufacturer

STMICROELECTRONICS [STMicroelectronics]

Datasheet

1.M59DR032A100N1T.pdf (38 pages)

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32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory

October 1999

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

SUPPLY VOLTAGE

– V

ASYNCHRONOUS PAGE MODE READ

– Page Width: 4 words

– Page Access: 35ns

– Random Access: 100ns

PROGRAMMING TIME

– 10µs by Word typical

– Double Word Programming Option

MEMORY BLOCKS

– Dual Bank Memory Array: 4 Mbit - 28 Mbit

– Parameter Blocks (Top or Bottom location)

– Main Blocks

DUAL BANK OPERATIONS

– Read within one Bank while Program or

– No delay between Read and Write operations

BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power Up

– Any combination of Blocks can be protected

– WP for Block Locking

COMMON FLASH INTERFACE (CFI)

64 bit SECURITY CODE

ERASE SUSPEND and RESUME MODES

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code, M59DR032A: A0h

– Device Code, M59DR032B: A1h

Erase and Read

Program and Erase

Erase within the other

= 12V: optional Supply Voltage for fast

= V

DDQ

= 1.65V to 2.2V: for Program,

Figure 1. Logic Diagram

A0-A20

TSOP48 (N)

12 x 20mm

V DD

V SS

M59DR032A

M59DR032B

V DDQ V PP

M59DR032A

M59DR032B

8 x 6 solder balls

PRELIMINARY DATA

FBGA48 (ZB)

BGA

DQ0-DQ15

AI02544B

1/38

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