M59DR032A100N1T STMICROELECTRONICS [STMicroelectronics], M59DR032A100N1T Datasheet - Page 15

• Manufacturer Part Number: M59DR032A100N1T
• Description: 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 17. CFI Query System Interface Information
Offset
1Ch
1Dh
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00C0h
000Ah
0017h
0022h
0000h
0004h
0000h
0000h
0004h
0000h
0004h
0000h
Data
V
V
V
V
Typical timeout per single byte/word program (multi-byte program count = 1), 2
(if supported; 0000h = not supported)
Typical timeout for maximum-size multi-byte program or page write, 2
(if supported; 0000h = not supported)
Typical timeout per individual block erase, 2
(if supported; 0000h = not supported)
Typical timeout for full chip erase, 2
(if supported; 0000h = not supported)
Maximum timeout for byte/word program, 2
(0000h = not supported)
Maximum timeout for multi-byte program or page write, 2
(0000h = not supported)
Maximum timeout per individual block erase, 2
(0000h = not supported)
Maximum timeout for chip erase, 2
(0000h = not supported)
DD
DD
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
Note: This value must be 0000h if no V
bit 7 to 4
bit 3 to 0
Note: This value must be 0000h if no V
BCD value in volts
BCD value in 100 millivolts
BCD value in volts
BCD value in 100 millivolts
HEX value in volts
BCD value in 100 millivolts
HEX value in volts
BCD value in 100 millivolts
n
n
times typical (offset 22h)
ms
Description
n
n
times typical (offset 1Fh)
ms
n
times typical (offset 21h)
PP
PP
pin is present
pin is present
n
times typical (offset 20h)
M59DR032A, M59DR032B
n
µs
n
µs
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