M59DR032A100N1T STMICROELECTRONICS [STMicroelectronics], M59DR032A100N1T Datasheet - Page 29

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M59DR032A100N1T

Manufacturer Part Number
M59DR032A100N1T
Description
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Table 28. Data Polling and Toggle Bits AC Characteristics
(T
Note: 1. All other timings are defined in Read AC Characteristics table.
A
= 0 to 70 °C or –40 to 85 °C; V
Symbol
t
t
t
t
WHQ7V
t
EHQ7V
Q7VQV
WHQV
EHQV
Write Enable High to DQ7 Valid (Program, W Controlled)
Write Enable High to DQ7 Valid (Block Erase, W Controlled)
Chip Enable High to DQ7 Valid (Program, E Controlled)
Chip Enable High to DQ7 Valid (Block Erase, E Controlled)
Q7 Valid to Output Valid (Data Polling)
Write Enable High to Output Valid (Program)
Write Enable High to Output Valid (Block Erase)
Chip Enable High to Output Valid (Program)
Chip Enable High to Output Valid (Block Erase)
DD
Parameter
= V
DDQ
= 1.65V to 2.2V)
(1)
M59DR032A, M59DR032B
Min
1.0
1.0
1.0
1.0
10
10
10
10
M59DR032
Max
200
200
200
200
10
10
10
10
0
Unit
sec
sec
sec
sec
µs
µs
ns
µs
µs
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