M59DR032A100N1T STMICROELECTRONICS [STMicroelectronics], M59DR032A100N1T Datasheet - Page 20

• Manufacturer Part Number: M59DR032A100N1T
• Description: 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M59DR032A, M59DR032B
Table 22. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; V
Note: 1. Sampled only, not 100% tested.
20/38
Symbol
V
I
I
CC4
CC5
PP
I
I
I
V
I
I
V
V
I
CC1
CC2
CC3
PP1
PP2
V
I
LO
OH
LI
OL
IH
IL
2. V
3. For standard program/erase operation V
(2,3)
(1)
(1)
PP
Input Leakage Current
Output Leakage Current
Supply Current
(Read Mode)
Supply Current
(Power Down)
Supply Current (Standby)
Supply Current
(Program or Erase)
Supply Current
(Dual Bank)
V
(Program or Erase)
V
(Standby or Read)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
CMOS
V
(Program or Erase)
may be connected to 12V power supply for a total of less than 100 hrs.
PP
PP
PP
Supply Current
Supply Current
Supply Voltage
Parameter
DD
Word Program, Block Erase
Program/Erase in progress
E = V
= V
PP
in one Bank, Read in the
Double Word Program
is don’t care.
DDQ
V
V
0V
RP = V
Test Condition
E = V
0V
IL
PP
PP
I
OH
, G = V
I
in progress
other Bank
OL
V
= 12V ± 0.6V
= 12V ± 0.6V
= 1.65V to 2.2V)
PP
V
= –100µA
V
= 100µA
DD
OUT
SS
IN
IH
± 0.2V
V
± 0.2V
CC
, f = 6MHz
V
V
DD
DD
V
V
DDQ
DDQ
–0.5
–0.4
11.4
Min
–0.4
–0.1
Typ
100
0.2
10
15
10
20
2
5
V
V
DDQ
DD
Max
12.6
400
0.4
0.1
±1
±5
20
10
50
20
40
10
5
+ 0.4
+ 0.4
Unit
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V