MJE13009_06 ONSEMI [ON Semiconductor], MJE13009_06 Datasheet - Page 5

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MJE13009_06

Manufacturer Part Number
MJE13009_06
Description
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
DUTY CYCLE ≤ 10%
NOTE
PW and V
R
B
V
Adjusted for Desired I
CE
t
I
r
C
, t
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
f
≤ 10 ns
CC
I
CM
P
Adjusted for Desired I
W
V
TIME
CEM
5 V
t
1
68
B1
0.02 mF
t
t
f
f
CLAMPED
t
2
0.001 mF
Table 1. Test Conditions for Dynamic Performance
1N4933
1
k
t
f
270
C
UNCLAMPED ≈ t
V
+5 V
clamp
t
OUTPUT WAVEFORMS
1
k
1 k
2N2222
33
1N4933
2N2905
1/2 W
1N4933
47
GAP for 200 mH/20 A
L
coil
2
http://onsemi.com
= 200 mH
100
33
MJE13009
MJE210
t
OBTAIN I
t
t
MJE200
1
1
2
− V
R
+5 V
ADJUSTED TO
B
BE(off)
I
5
B
L
L
coil
coil
V
D.U.T.
V
clamp
C
CC
(I
(I
CM
CM
V
)
)
CC
L
I
C
51
5.1 k
MR826*
V
V
CC
clamp
Scope−Tektronics
475 or Equivalent
Test Equipment
*SELECTED FOR ≥ 1 kV
= 20 V
V
V
CE
= 300 Vdc
clamp
t
Duty Cycle = 1.0%
R
for desired I
r
R
+10 V
, t
V
R
D1 = 1N5820 or Equiv.
R
B
B
D1
CC
C
B
f
SWITCHING
and R
0
RESISTIVE
< 10 ns
= 15 W
= W
−4.0
= 125 V
V
TUT
− 8 V
C
+125 V
adjusted
B
and I
25 ms
R
C
SCOPE
C

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