BFP650_10 INFINEON [Infineon Technologies AG], BFP650_10 Datasheet - Page 11

• Manufacturer Part Number: BFP650_10
• Description: High Linearity Low Noise SiGe:C NPN RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

4.3
Measurement setup is a test fixture with Bias T’s in a 50
Figure 2
Table 5
Parameter
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
High linearity operation point
Class A operation point
Minimum noise figure
Minimum noise figure
Associated gain
Linearity
1 dB gain compression point
3rd order intercept point
Table 6
Parameter
Maximum power gain
High linearity operation point
Class A operation point
Data Sheet
IN
Frequency Dependent AC Characteristics
BFP650 Testing Circuit
AC Characteristics,
AC Characteristics,
Bias-T
VB
V
V
CE
CE
= 3 V,
= 3 V,
Symbol
G
G
S
S
NF
G
OP
OIP
Symbol
G
G
(Pin 1)
21
21
ms
ms
ass
ms
ms
E
B
min
1dB
3
f
f
= 150 MHz
= 450 MHz
Top View
Min.
–
–
–
–
–
–
–
–
Min.
–
–
11
system,
Typ.
35.5
38
35
37.5
0.75
32
16.5
29.5
Typ.
30
31.5
Values
Values
C
E
T
A
= 25 °C
Max.
–
–
–
–
–
–
–
–
Max.
–
–
Unit
dB
dB
dB
dBm
Unit
dB
VC
Bias -T
Electrical Characteristics
Revision 1.0, 2010-10-22
Note / Test Condition
I
I
Z
I
I
Z
I
I
Z
I
I
Note / Test Condition
I
I
C
C
C
C
C
C
C
C
C
C
S
S
S
= 30 mA
= 70 mA
= 30 mA
= 70 mA
= 30 mA
= 30 mA
= 70 mA
= 70 mA
= 30 mA
= 70 mA
=
=
=
Z
Z
Z
L
opt
L
= 50
= 50
BFP650
OUT