BFP650_10 INFINEON [Infineon Technologies AG], BFP650_10 Datasheet - Page 15

no-image

BFP650_10

Manufacturer Part Number
BFP650_10
Description
High Linearity Low Noise SiGe:C NPN RF Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
4.4
Figure 3
Figure 4
Data Sheet
Characteristic DC Diagrams
Collector Current vs. Collector Emitter Voltage
DC Current Gain
120
110
100
90
80
70
60
50
160
140
120
100
80
60
40
20
0.1
0
0
h
FE
=
f
(
I
1
C
),
1
V
CE
= 3 V
2
15
V
I
C
CE
[mA]
10
[V]
I
3
C
=
f
(
V
CE
940µA
100
),
I
4
B
810µA
350µA
690µA
575µA
460µA
260µA
160µA
80µA
18µA
= Parameter
Electrical Characteristics
Revision 1.0, 2010-10-22
5
1000
BFP650

Related parts for BFP650_10