BFP650_10 INFINEON [Infineon Technologies AG], BFP650_10 Datasheet - Page 20

• Manufacturer Part Number: BFP650_10
• Description: High Linearity Low Noise SiGe:C NPN RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Figure 12
Figure 13
Data Sheet
Maximum Power Gain
Maximum Power Gain
42
39
36
33
30
27
24
21
18
15
12
42
39
36
33
30
27
24
21
18
15
12
9
6
3
0
9
6
3
0
0.5
0
20
1
G
G
max
max
1.5
40
=
=
f
f
(
(
I
V
60
C
2
CE
),
),
V
CE
I
C
2.5
80
20
V
I
= 3 V,
= 70 mA,
C
CE
[mA]
[V]
100
3
f
= Parameter in GHz
f
120
= Parameter in GHz
3.5
140
4
0.15GHz
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
0.15GHz
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
160
4.5
Electrical Characteristics
Revision 1.0, 2010-10-22
180
5
BFP650