FDD86102LZ_12 FAIRCHILD [Fairchild Semiconductor], FDD86102LZ_12 Datasheet
FDD86102LZ_12
Manufacturer Part Number
FDD86102LZ_12
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDD86102LZ_12.pdf
(6 pages)
©2012 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C1
FDD86102LZ
N-Channel PowerTrench
100 V, 35 A, 22.5 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDD86102LZ
DS(on)
DS(on)
= 22.5 mΩ at V
= 31 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
GS
GS
= 4.5 V, I
FDD86102LZ
-Continuous (Silicon limited)
-Continuous
-Pulsed
= 10 V, I
Device
(TO-252)
D-PAK
TO-252
D
D
= 7 A
= 8 A
T
®
C
= 25 °C unless otherwise noted
MOSFET
Parameter
D
D-PAK(TO-252)
Package
1
T
T
T
T
T
General Description
This N-Channel MOSFET
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
A
C
C
A
C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC - DC Conversion
Inverter
Synchronous Rectifier
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
S
Tape Width
is produced using Fairchild
12 mm
-55 to +150
Ratings
100
±20
3.1
2.3
42
35
40
84
54
40
8
®
process that has
www.fairchildsemi.com
August 2012
2500 units
Quantity
Units
°C/W
mJ
°C
W
V
V
A
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FDD86102LZ_12 Summary of contents
Page 1
FDD86102LZ N-Channel PowerTrench 100 22.5 mΩ Features Max r = 22.5 mΩ DS(on) GS Max mΩ 4 DS(on) GS HBM ESD protection level ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics (Note 2) V ...
Page 3
Typical Characteristics 4 3 PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE ...
Page 4
Typical Characteristics GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics 0.001 0.01 0.1 ...
Page 5
Typical Characteristics 10000 1000 100 SINGLE PULSE 2.3 C/W θ Figure 13. 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 ...
Page 6
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ ® AccuPower™ FRFET AX-CAP™* Global Power ...