FDD8880_08 FAIRCHILD [Fairchild Semiconductor], FDD8880_08 Datasheet

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FDD8880_08

Manufacturer Part Number
FDD8880_08
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©2008 Fairchild Semiconductor Corporation
FDD8880
N-Channel PowerTrench
30V, 58A, 9m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
R
DS(ON)
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
Device Marking
STG
FDD8880
and fast switching speed.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
G
S
amb
C
C
= 25
= 25
o
C
FDD8880
= 25
Device
(TO-252)
o
o
D-PAK
C, V
C, V
TO-252
o
C, V
®
GS
GS
MOSFET
GS
= 10V) (Note 1)
= 4.5V) (Note 1)
Parameter
T
= 10V, with R
C
D
= 25°C unless otherwise noted
TO-252AA
Package
JA
= 52
Features
• r
• r
• High performance trench technology for extremely low
• Low gate charge
• High power and current handling capability
r
RoHS Compliant
DS(ON)
DS(ON)
DS(ON)
o
2
C/W)
copper pad area
Reel Size
= 9m , V
= 12m , V
13”
GS
GS
= 10V, I
= 4.5V, I
G
Tape Width
12mm
D
-55 to 175
D
S
Ratings
Figure 4
= 35A
D
0.37
2.73
= 35A
100
30
58
51
13
53
55
52
20
April 2008
N
2500 units
Quantity
FDD8880 Rev. B3
tm
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
A
C
o
C

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FDD8880_08 Summary of contents

Page 1

FDD8880 ® N-Channel PowerTrench MOSFET 30V, 58A, 9m General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics B Drain to Source Breakdown Voltage VDSS I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to Source Threshold Voltage GS(TH) r Drain to Source ...

Page 3

Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0 100 T , CASE TEMPERATURE ( C Figure 1. Normalized Power Dissipation vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.5 1 0.2 0.1 0.05 0.02 ...

Page 4

Typical Characteristics 1000 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) 1 SINGLE PULSE T = MAX RATED 0 DRAIN TO SOURCE VOLTAGE (V) DS ...

Page 5

Typical Characteristics 1.2 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 2000 ISS GS GD 1000 RSS GD ...

Page 6

Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK Figure 15. Unclamped Energy Test Circuit g(REF) Figure 17. Gate Charge Test Circuit V GS ...

Page 7

Thermal Resistance vs. Mounting Pad Area The maximum rated junction temperature, T thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, P application. Therefore the o temperature C), and thermal resistance R A ...

Page 8

PSPICE Electrical Model .SUBCKT FDD8880 rev April 2004 9.5e- 9.5e-10 Cin 6 8 1.15e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak ...

Page 9

SABER Electrical Model rev April 2004 template FDD8880 n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl=2e-12,ikf=10,nl=1.01,rs=3.76e-3,trs1=8e-4,trs2=2e-7,cjo=4.8e-10,m=0.55,tt=1e-17,xti=2) dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=5.5e-10,isl=10e-30,nl=10,m=0.45) m..model mmedmod = (type=_n,vto=2.0,kp=10,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.5,kp=170,is=1e-30, tox=1) m..model mweakmod = ...

Page 10

PSPICE Thermal Model REV 23 April 2004 FDD8880T CTHERM1 TH 6 8e-4 CTHERM2 6 5 1e-3 CTHERM3 5 4 2.5e-3 CTHERM4 4 3 2.6e-3 CTHERM5 3 2 8e-3 CTHERM6 2 TL 1.5e-2 RTHERM1 TH 6 1.44e-1 RTHERM2 6 5 1.9e-1 ...

Page 11

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ ...

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